leshan radio company, ltd. general purpose t ransistors pnp silicon maximum ratings rating symbol bc856 bc857 bc858 unit collector?emitter voltage v ceo ?65 ?45 ?30 v collector?base voltage v cbo ?80 ?50 ?30 v emitter?base voltage v ebo ?5.0 ?5.0 ?5.0 v collector current ? continuous i c ?100 ?100 ?100 madc thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board, (1) p d 150 mw t a = 25c thermal resistance, junction to ambient r ja 833 c/w junction and storage temperature t j , t stg ?55 to +150 c device marking lbc856 a wt1g= 3a; lbc856bwt1g= 3b; lbc857 a wt1g= 3e; lbc857bwt1g = 3f; lbc858 a wt1g= 3j; lbc858bwt1g= 3k; lbc858cwt1g= 3l electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min typ max unit off characteristics collector?emitter breakdown v oltage ? 65 ? ? (i c = ?10 ma) v (br)ceo ? 45 ? ? v ? 30 ? ? collector?emitter breakdown v oltage ? 80 ? ? (i c = ?10 a, v eb = 0) v (br)ces ? 50 ? ? v ? 30 ? ? collector?base breakdown v oltage ? 80 ? ? (i c = ? 10 a ) v (br)cbo ? 50 ? ? v ? 30 ? ? emitter?base breakdown v oltage ? 5.0 ? ? (i e = ? 1.0 a ) v (br)ebo ? 5.0 ? ? v ? 5.0 ? ? collector cutoff current (v cb = ? 30 v) i cbo ? ? ? 15 na (v cb = ? 30 v, t a = 150c) ? ? ? 4.0 a 1.fr?5=1.0 x 0.75 x 0.062in these transistors are designed for general purpose amplifier applications. they are housed in the sot?323/ sc?70 which is designed for low power surface mount applications. 1 3 2 lbc856 a wt1g, bwt1g lbc857 a wt1g, bwt1g lbc858 a wt1g, bwt1g cwt1g 2 emitter 3 collector 1 base lbc856 series lbc857 series lbc858 series lbc856 series lbc857b only lbc858 series lbc856 series lbc857 series lbc858 series lbc856 series lbc857 series lbc858 series sot? 323 / sc-70 features rohs requirements. we declare that the material of product compliance with cwt1g lbc857cwt1g= 3g; rev.o 1/6
leshan radio company, ltd. electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min typ max unit on characteristics dc current gain h fe ? (i c = ?2.0 ma, v ce = ?5.0 v) 125 180 250 220 290 475 420 520 800 collector?emitter saturation voltage (i c = ?10 ma, i b = ? 0.5 ma) v ce(sat) ? ? ? 0.3 v collector?emitter saturation voltage (i c = ?100 ma, i b = ? 5.0 ma) ? ? ? 0.65 base?emitter saturation voltage (i c = ?10 ma, i b = ?0.5 ma) v be(sat) ? ? 0.7 ? v base?emitter saturation voltage (i c = ?100 ma, i b = ?5.0 ma) ? ? 0.9 ? base?emitter voltage (i c = ?2.0 ma, v ce = ?5.0 v) v be(on) ? 0.6 ? ? 0.75 v base?emitter voltage (i c = ?10 ma, v ce = ?5.0 v) ? ? ? 0.82 small?signal characteristics current?gain ? bandwidth product f t 100 ? ? mhz (i c = ? 10 ma, v ce = ? 5.0 vdc, f = 100 mhz) output capacitance (v cb = ? 10 v, f = 1.0 mhz) c ob ? ? 4.5 pf noise figure nf ?? ?? 10 db (i c = ? 0.2 ma,v ce = ? 5.0 v dc , r s = 2.0 k ? , f =1.0 khz, bw= 200 hz) lbc856 a wt1g, bwt1g lbc857 a wt1g, bwt1g,cwt1g lbc858 a wt1g, bwt1g, cwt1g lbc858c lbc856b,lbc857b, lbc858b lbc856a, lbc857a, lbc858a device ordering information package shipping lbc856awt1g series sot-23 sot-23 10000/tape & reel 3000/tape & reel pb free ? ( ) LBC856AWT3G series lbc857c, rev.o 2/6
leshan radio company, ltd. lbc857/lbc858 i c , collector current (madc) figure 1. normalized dc current gain i c , collector current (madc) figure 2. ?saturation? and ?on? voltages ?0.2 ?0.5 ?1.0 ?2.0 ?5.0 ?10 ?20 ?50 ?100 ?200 v ce = ?10 v t a = 25c 2.0 1.5 1.0 0.7 0.5 0.3 0.2 ?0.1 ?0.2 ?0.5 ?1.0 ?2.0 ?5.0 ?10 ?20 ?50 ?100 t a = 25c v be(sat) @ i c /i b =10 v be(on) @ v ce = ?10 v v ce(sat) @ i c /i b = 10 t a = 25c v, voltage (volts) ?1.0 ?0.9 ?0.8 ?0.7 ?0.6 ?0.5 ?0.4 ?0.3 ?0.2 ?0.1 0 vb , temperature coefficient (mv/ c) 1.0 1.2 1.6 2.0 2.4 2.8 i b , base current (ma) figure 3. collector saturation region v ce , collector? emitter voltage (v) i c = ?200 ma ?55c to +125c i c , collector current (ma) figure 4. base?emitter temperature coefficient ?0.2 ?1.0 ?10 ?100 ?0.02 ?0.1 ?1.0 ?10 ?20 ?2.0 ?1.6 ?1.2 ?0.8 ?0.4 0 i c = ?10 ma i c = ?100 ma i c = ? 20 ma i c = ?50 ma h fe , normalized dc current gain v r , reverse voltage (volts) figure 5. capacitances i c , collector current (madc) figure 6. current?gain ? bandwidth product t a =25c v ce = ?10v t a = 25c f t , current? gain ? bandwidth product (mhz) c, capacitance(pf) c ob c ib 400 300 200 150 100 80 60 40 30 20 10.0 7.0 5.0 3.0 2.0 1.0 ?0.4 ?0.6 ?1.0 ?2.0 ?4.0 ?6.0 ?10 ?20 ?30 ?40 ?0.5 ?1.0 ?2.0 ?3.0 ?5.0 ?10 ?20 ?30 ?50 lbc856 a wt1g, bwt1g lbc857 a wt1g, bwt1g,cwt1g lbc858 a wt1g, bwt1g, cwt1g rev.o 3/6
leshan radio company, ltd. i c , collector current (ma) figure 7. dc current gain i c , collector current (ma) figure 8. ?on? voltage i b , base current (ma) figure 9. collector saturation region i c , collector current (ma) figure 10. base?emitter temperature coefficient v be(sat) @ i c /i b =10 v be @v ce = ?5.0 v t j = 25c v ce = ?5.0v t a = 25c v ce(sat) @ i c /i b = 10 v ce , collector? emitter voltage (volts) vb , temperature coefficient (mv/c) v, voltage (volts) i c = ?10ma ?100ma ?20ma ?200ma t j = 25c vb for v be ?55c to 125c ?1.0 ?1.4 ?1.8 ?2.2 ?2.6 ?3.0 ?1.0 ?0.8 ?0.6 ?0.4 ?0.2 0 2.0 1.0 0.5 0.2 ?2.0 ?1.6 ?1.2 ?0.8 ?0.4 0 ?0.1?0.2 ?1.0 ?2.0 ?5.0 ?10 ?20 ?50 ?100?200 ?0.2 ?0.5 ?1.0 ?2.0 ?5.0 ?10 ?20 ?50 ?100 ?200 ?0.2 ?0.5 ?1.0 ?2.0 ?5.0 ?10 ?20 ?50 ?100 ?200 ?0.02 ?0.05 ?0.1 ?0.2 ?0.5 ?1.0 ?2.0 ?5.0 ?10 ?20 h fe , dc current gain (normalized) ?50ma v r , reverse voltage (volts) figure 11. capacitance i c , collector current (ma) figure 12. current?gain ? bandwidth product c, capacitance (pf) f t , current? gain ? bandwidth product t c ob c ib t j = 25c v ce = ?5.0v ?0.1 ?0.2 ?0.5 ?1.0 ?2.0 ?5.0 ?10 ?20 ?50 ?100 ?1.0 ?10 ?100 40 20 10 6.0 4.0 2.0 500 200 100 50 20 lbc856 lbc856 a wt1g, bwt1g lbc857 a wt1g, bwt1g,cwt1g lbc858 a wt1g, bwt1g, cwt1g rev.o 4/6
leshan radio company, ltd. t, time (ms) figure 13. thermal response v ce , collector?emitter voltage (v) figure 14. active region safe operating area bonding wire limit thermal limit second breakdown limit the safe operating area curves indicate i c ?v ce limits of the transistor that must be observed for reliable operation. collector load lines for specific circuits must fall below the limits indicated by the applicable curve. the data of figure 14 is based upon t j(pk) = 150c; t c or t a is variable depending upon conditions. pulse curves are valid for duty cycles to 10% provided t j(pk) < 150c. t j(pk) may be calcu- lated from the data in figure 13. at high case or ambient temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by the sec- ondary breakdown. bc558 bc557 bc556 z jc (t) = r(t) r jc r jc = 83.3c/w max z ja (t) = r(t) r ja r ja = 200c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) r jc (t) i c , collector current (ma) r( t), transient thermal resistance (normalized) duty cycle, d = t 1 /t 2 t 1 t 2 p (pk) single pulse single pulse t a = 25c t j = 25c 3 ms 1s 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 d=0.5 0.2 0.1 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k 2.0k 5.0k 10k ?1.0 ?0.5 ?10 ?30 ?45 ?65 ?100 ?200 ?100 ?50 ?10 ?5.0 ?2.0 lbc856 a wt1g, bwt1g lbc857 a wt1g, bwt1g,cwt1g lbc858 a wt1g, bwt1g, cwt1g rev.o 5/6
leshan radio company, ltd. sc - 70 / sot - 323 lbc856 a wt1g, bwt1g lbc857 a wt1g, bwt1g,cwt1g lbc858 a wt1g, bwt1g, cwt1g a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 xx m xx = specific device code m = date code = pb?free package generic marking diagram *this information is generic. please refer to device data sheet for actual part marking. pb?free indicator, ago or microdot a o, may or may not be present. 1 soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.7 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.425 ref 0.028 ref 0.026 bsc 0.017 ref rev.o 6/6
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